The influence of beam energy on apparent layer thickness using ultralow energy O2+ SIMS on surface Si1−xGex-Reference-Cited by-同舟云学术

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The influence of beam energy on apparent layer thickness using ultralow energy O2+ SIMS on surface Si1−xGex

Published:2010-05-19 Issue:1-2 Volume:43 Page:211-213
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Dowsett M. G.,Morris R. J. H.,Hand M.,Grigg A. T.,Walker D.,Beanland R.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference10 articles.

1. Depth profiling of shallow arsenic implants in silicon using SIMS

2. Profile distortions and atomic mixing in SIMS analysis using oxygen primary ions

3. On determining accurate positions, separations, and internal profiles for delta layers

4. Depth profiling using ultra-low-energy secondary ion mass spectrometry

5. Different optical conductivity enhancement (OCE) protocols to eliminate charging during ultra low energy SIMS profiling of semiconductor and semi-insulating materials

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An O2+ probe energy study for boron quantification in Si1−Ge (0 ≤x≤ 1) using secondary ion mass spectrometry;Applied Surface Science;2016-12

2. MCsn+-SIMS: An Innovative Approach for Direct Compositional Analysis of Materials without Standards;Energy Procedia;2013

3. Exact compositional analysis of SiGe alloys by matrix effect compensated MCs+-SIMS;Applied Physics A;2012-05-04

4. Atomic spectrometry update. Industrial analysis: metals, chemicals and advanced materials;Journal of Analytical Atomic Spectrometry;2011

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