Affiliation:
1. Department of Electrical Engineering Yuan Ze University Chung‐Li Dist. Taoyuan 32003 Taiwan
2. Ceramic Processing Lab Department of Physics PSG College of Technology Coimbatore 641004 India
3. Department of Electrical and Electronics Engineering Presidency University Bangalore 560064 India
4. School of Electrical and Electronics Engineering SASTRA Deemed University Thanjavur 613401 India
Abstract
Herein, the 1D Solar Cell Capacitance Simulator software is used to perform numerical analysis of thin‐film solar cells with Cu2ZnSnS4, Cu2BaSnS4, Cu2FeSnS4, and Cu2MnSnS4 absorber layers. The main goal is to investigate the impact of parameters, such as absorber layer thickness, acceptor density, buffer layer, bandgap, and donor density, on the efficiency of these solar cells. The absorber layer investigation entails varying the thickness and the acceptor density to evaluate their influence on the efficiency of the solar cell. A new zinc oxide sulfide (Zn(O,S)) buffer layer is also introduced instead of the conventional cadmium sulfide (CdS) buffer layer. The Zn(O,S) bandgap and its donor density, which are investigated in terms of how they affect the efficiency of the solar cells, have been varied. The optimal values for the thickness of the absorber layer, acceptor density, and the bandgap of the buffer layer are calculated. Subsequently, the donor density is evaluated to find any potential defects that may affect the efficiency of the solar cell. These results confirm that Zn(O,S) can be utilized as a buffer layer. This study concludes that Cu2ZnSnS4, Cu2BaSnS4, and Cu2MnSnS4 absorber layers have superior efficiency in comparison with Cu2FeSnS4.
Funder
National Science and Technology Council