Affiliation:
1. Institut für Silizium-Photovoltaik Helmholtz-Zentrum Berlin für Materialien und Energie GmbH Schwarzschildstr. 8 12489 Berlin Germany
Abstract
In many materials, the presence of hydrogen influences the structural and electronic properties. An equilibrium model based on statistical mechanics is presented that describes the unintentional incorporation of hydrogen. As an example, the H concentration in four different semiconductors, namely, c‐Si, c‐Ge, ZnO, and β‐Ga2O3, is measured using H effusion. The measured H concentration ranges from to cm. From the effusion data, the position of the H chemical potential and the H binding energies are derived.
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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