Bipolar Suppression for High Performance n‐Type GeTe‐Based Thermoelectrics

Author:

Yin Liang‐Cao1,Liu Wei‐Di2ORCID,Li Meng2,Wang De‐Zhuang1,Li Shuai1,Li Shu‐Qing1,Shi Xiao‐Lei2,Wang Yifeng3,Zhang Lixiong1,Liu Qingfeng1,Chen Zhi‐Gang2ORCID

Affiliation:

1. State Key Laboratory of Materials‐Oriented Chemical Engineering College of Chemical Engineering Nanjing Tech University Nanjing 211816 China

2. School of Chemistry and Physic ARC Research Hub in Zero‐emission Power Generation for Carbon Neutrality and Center for Materials Science Queensland University of Technology Brisbane QLD 4000 Australia

3. College of Materials Science and Engineering Nanjing Tech University Nanjing 211816 China

Abstract

AbstractStable operation of thermoelectric devices requires both p‐ and n‐type materials with desirable compatibility and similar application temperature range. However, n‐type GeTe‐based materials currently have a lower application temperature range (<525 K) than p‐type GeTe‐based materials (500–800 K) due to the strong bipolar effect. Here, it is demonstrated that the bipolar effect of n‐type GeTe can be inhibited by the combination of bandgap enlargement and minority carrier filtering. Specifically, reducing cation vacancies can enlarge the bandgap, while introducing localized heavy doping areas with relatively large bandgap can generate a minority carrier barrier in the valence band to block the minority carrier transport. Consequently, a record‐high power factor (5.3 µW cm−1 K−2) and figure‐of‐merit (zT) of 0.45 can be obtained at 723 K in n‐type Ge0.46Bi0.17Pb0.37Te0.7Se0.3. This work demonstrates that bipolar suppression is an effective strategy to realize high‐performance n‐type GeTe‐based materials in the mid‐temperature range, and correspondingly extends the applicability.

Funder

National Natural Science Foundation of China

Australian Research Council

Publisher

Wiley

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