Ionic and electronic processes during frenkel defect annealing in KBr crystals above LHeT-Reference-Cited by-同舟云学术

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Ionic and electronic processes during frenkel defect annealing in KBr crystals above LHeT

Published:1983-09-01 Issue:1 Volume:119 Page:49-59
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Ziraps V.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Recombination of Vacancies and Interstitials in KBr at Low Temperatures

2. Volumenänderung von Alkalihalogenidkristallen bei der Bildung von Gitterdefekten durch niederenergetische Strahlung

3. Characteristic Volume Expansion of Point Defects in KBr

4. H-center interactions during thermal annealing in KBr

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion and electron trapping: release and relaxation processes in fluoride crystals;Optical Organic and Inorganic Materials;2001-04-10

2. Shallow electron traps in alkali halide crystals: Mollwo-Ivey relations of the optical absorption bands;SPIE Proceedings;2001-03-08

3. Ionic charge transport, thermoactivated delocalization and interaction with radiation-induced defects in LiBaF3crystals;Radiation Effects and Defects in Solids;1999-11

4. Theoretical simulations of I-center annealing in KCl crystals;Radiation Effects and Defects in Solids;1995-12

5. Computer Simulations of I-Center Annealing in KCl and KBr Crystals. Theoretical Interpretation of Thermostimulated Experiments;physica status solidi (b);1995-08-01

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