Optical Properties of Wide-Gap II-VI ZnTe Epilayers-Reference-Cited by-同舟云学术

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Optical Properties of Wide-Gap II-VI ZnTe Epilayers

Published:1994-02-01 Issue:2 Volume:181 Page:427-437
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Averous M.,Abounadi A.,Aulombard R. L.,Bouchara D.,Briot N.,Briot O.,Calas J.,Cloitre T.,Gil B.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. (Ed.), Proc. 7th ICTP-IUPAP Trieste Semiconductor Symp. Wide-Band-Gap Semiconductors, North-Holland Publ. Co., Amsterdam 1993.

2. Heavily dopedp‐ZnSe:N grown by molecular beam epitaxy

3. Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth

4. Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping

5. Plasma Doping of Nitrogen in ZnSe Using Electron Cyclotron Resonance

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characteristics of three-beam photoreflectance in ZnTe/GaAs with deep traps;Solid State Communications;1999-05

2. MBE Growth and Properties of ZnYbTe Layers;Acta Physica Polonica A;1996-11

3. Photomodulated reflectivity of multiple quantum wells;Journal of Crystal Growth;1996-02

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