Radial Energy Transfer Density Distribution around the Fast Ion Tracks in Silicon and Germanium

Author:

Khlupin S. I.,Akkerman A. F.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Calculation of Cross Section for Ion-Induced SEU Through Direct Ionization in Nanometric Silicon Devices With Small Critical Energy;IEEE Transactions on Nuclear Science;2013-08

2. Anthology of the Development of Radiation Transport Tools as Applied to Single Event Effects;IEEE Transactions on Nuclear Science;2013-06

3. SEU due to electrons in silicon devices with nanometric sensitive volumes and small critical charge;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-09

4. Ion track structure calculations in silicon – Spatial and temporal aspects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-07

5. Impact of time and space evolution of ion tracks in nonvolatile memory cells approaching nanoscale;Journal of Applied Physics;2010-12-15

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