Valence-Band Properties of Bi2Te3 from Galvanomagnetic Measurements-Reference-Cited by-同舟云学术

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Valence-Band Properties of Bi2Te3 from Galvanomagnetic Measurements

Published:1973-08-01 Issue:2 Volume:58 Page:457-470
ISSN:0370-1972
Container-title:Physica Status Solidi (b)
language:de
Short-container-title:Phys. Stat. Sol. (b)

Author:

Sologub V. V.,Goletskaya A. D.,Lang I. G.,Pavlov S. T.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Progr. Semicond., Heywood Co. Ltd., London 1963.

2. Poc. Internat. Conf. Phys. Semicond., Exeter 1962 (p. 569).

3. de Haas-van Alphen Effect inn-TypeBi2Te3

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Band Convergence in Thermoelectric Materials: Theoretical Background and Consideration on Bi–Sb–Te Alloys;ACS Applied Energy Materials;2020-01-27

2. High thermoelectric performance in (Bi0.25Sb0.75)2Te3 due to band convergence and improved by carrier concentration control;Materials Today;2017-10

3. Investigation of the Weak-Field Charge Transport in Semiconducting V2—VI3 Compounds with Trigonal Symmetry I. Expanded Model for the Transport Coefficients;physica status solidi (b);1984-07-01

4. Valence Band Structure of (Bi1–xSbx)2Te3 Single Crystals;physica status solidi (b);1981-04-01

5. Nichtparabolizität des valenzbandes von Bi2Te3 gefolgert aus transporteigenschaften;physica status solidi (b);1975-06-01

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