Mössbauer Study of57Fe Implanted in Silicon
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Mössbauer effect isomer shift of Fe57 in silicon and germanium
2. in: Hyperfine Interactions in Excited Nuclei, Vol. 1, Ed. Golding and Kalish (p. 3).
3. The 57Fe Mössbauer spectra in copper doped silicon
4. Electric Field Gradients in Charge-Perturbed Lattices
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1. Epitaxial gamma-iron silicide grown on single-crystal Si. A summary of Mossbauer results;Hyperfine Interactions;1998
2. Structural composition dependence of amorphous silicon-iron prepared by ion implantation and by coevaporation: A Mössbauer study;Physical Review B;1991-09-01
3. Characterization of Semiconductors by Mössbauer Spectroscopy;Mössbauer Spectroscopy Applied to Inorganic Chemistry;1989
4. Ion‐beam mixing at Fe‐Si interface: An interface‐sensitive conversion electron Mössbauer spectroscopic study;Journal of Applied Physics;1985-04-15
5. Study of silicon layer implanted with iron;Nuclear Instruments and Methods in Physics Research;1981-12
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