Spin centres on clean germanium and silicon surfaces and their interaction with adsorbed molecules-Reference-Cited by-同舟云学术

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Spin centres on clean germanium and silicon surfaces and their interaction with adsorbed molecules

Published:1982-12-01 Issue:2 Volume:114 Page:705-713
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Demidovich G. B.,Karyagin S. N.,Kiselev V. F.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. Dangling bonds on silicon

2. and , Adsorption Phenomena on Semiconductors and Dielectric Surfaces, Izd. Nauka, Moscow 1978 (in Russian).

3. Properties of Clean Silicon Surfaces by Paramagnetic Resonance

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1. Adsorption-induced modification of spin and recombination centers in porous silicon;Thin Solid Films;1996-04

2. Photosensitization of electronic transitions by dye molecules in systems consisting of a semiconductor and adsorbed molecules of p-benzoquinone;Theoretical and Experimental Chemistry;1990

3. Electron paramagnetic resonance of solid surfaces;Uspekhi Fizicheskih Nauk;1989

4. The Energy Spectrum of Semiconductor Surfaces;Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics;1987

5. Jahn-Teller effect on silicon surface under laser irradiation;Surface Science;1984-11

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