Raman Scattering by Acceptors and Donors in p-Type ZnSe
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Compensation processes in nitrogen doped ZnSe
2. Photoluminescence properties of nitrogen‐doped ZnSe grown by molecular‐beam epitaxy
3. The Raman spectra of cubic zinc selenide and telluride
4. Phonon coupling to excitations of free and localized electrons inn-type ZnSe
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2. Doping limits in II–VI compounds — Challenges, problems and solutions;Progress in Crystal Growth and Characterization of Materials;1998-01
3. Spin-flip Raman scattering studies of post-growth annealed p-type nitrogen-doped zinc selenide;Semiconductor Science and Technology;1997-12-01
4. Localization of a Conduction Electron Near a Semiconductor-Insulator Interface by a Charged Centre Situated in the Insulator;physica status solidi (b);1997-04
5. Spin-flip Raman scattering studies of doped epitaxial zinc selenide;Journal of Crystal Growth;1996-02
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