CdS1−xTex as Persistence-type Semiconductor Mixed Crystals-Reference-Cited by-同舟云学术

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CdS1−xTex as Persistence-type Semiconductor Mixed Crystals

Published:1981-06-01 Issue:2 Volume:105 Page:543-550
ISSN:0370-1972
Container-title:physica status solidi (b)
language:de
Short-container-title:phys. stat. sol. (b)

Author:

Goede O.,Heimbrodt W.,Müller R.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Optical Properties of Tellurium as an Isoelectronic Trap in Cadmium Sulfide

2. Luminescence in Tellurium‐Doped Cadmium Sulfide

3. Photoluminescence due to isoelectric oxygen and tellurium traps in II–VI alloys

4. Te-concentration dependence of the emission intensity of CdS:Te by radioactive-tracer profile technique

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2. Clustering in ZnBVI-rich SrxZn1−xOyBVI1−y (BVI = S, Se, Te) highly mismatched alloys;Physica E: Low-dimensional Systems and Nanostructures;2020-04

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4. Ternary ZnS:Te nanoparticles capped with 3-mercaptopropionic acid prepared in aqueous media;Journal of Materials Science: Materials in Electronics;2016-06-23

5. Physics;CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications;2010

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