Theory for n-Surface Charge Layers in Hg1−xCdxTe MIS Structures
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
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1. Exchange and spin-orbit effects in inversion layers on the gapless semimagnetic semiconductor HgMnTe;Semiconductor Science and Technology;2001-03-27
2. Magneto-conductance spectroscopy of a narrow-gap MIS device;Semiconductor Science and Technology;1996-11-01
3. Pseudoultrarelativistic behavior and specification of spinlike effects in the two-dimensional electron gas in Kane semiconductors with direct and inverted band structure;Physical Review B;1996-06-15
4. 2D channel transport of metal-insulator semiconductor field effect transistors on narrow-gap Hg1-xCdxTe (0.2;Semiconductor Science and Technology;1994-01-01
5. Stationary character of 2D states in inversion and accumulation layers on zero-gap HgCdTe;Semiconductor Science and Technology;1993-03-01
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