Tight-Binding Model for Zn3As2 Valence Bands
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Electronic Structure and the Properties of Solids, W. H. Freeman, San Francisco 1980.
2. Electrical conductivity of Zn3As2
3. Intraband and interband optical transitions in Zn3AS2
4. Magnetoresistance Effect in p-Zn3As2 Single Crystals
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1. Energy Band Structure of Zn3P2-Type Semiconductors: Analysis of the Crystal Structure Simplifications and Energy Band Calculations;physica status solidi (b);2001-10
2. A TEM investigation of Zn3As2 grown on (001) and (111) InP by MOVPE;Journal of Materials Science;2001
3. Electronic energy levels of an ideal vacancy in II3–V2 compounds;Solid State Communications;1995-02
4. The Raman scattering of Zn3As2;Infrared Physics & Technology;1994-10
5. Semiempirical tight-binding band structure ofII3V2semiconductors:Cd3P2,Zn3P2,Cd3As2, andZn3As2;Physical Review B;1994-09-15
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