Strain‐Driven and Layer‐Number‐Dependent Crossover of Growth Mode in van der Waals Heterostructures: 2D/2D Layer‐By‐Layer Horizontal Epitaxy to 2D/3D Vertical Reorientation-Reference-Cited by-同舟云学术

Strain‐Driven and Layer‐Number‐Dependent Crossover of Growth Mode in van der Waals Heterostructures: 2D/2D Layer‐By‐Layer Horizontal Epitaxy to 2D/3D Vertical Reorientation

Published:2018-05-17 Issue:14 Volume:5 Page:1800382
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Choudhary Nitin¹,Chung Hee‐Suk²,Kim Jung Han¹,Noh Chanwoo³,Islam Md Ashraful¹⁴,Oh Kyu Hwan⁵,Coffey Kevin⁶⁷,Jung YounJoon³,Jung Yeonwoong¹⁴⁶^ORCID

Affiliation:

1. NanoScience Technology Center University of Central Florida Orlando FL 32826 USA

2. Analytical Research Division Korea Basic Science Institute Jeonju 54907 South Korea

3. Department of Chemistry Seoul National University Seoul 08826 South Korea

4. Department of Electrical and Computer Engineering University of Central Florida Orlando FL 32826 USA

5. Department of Materials Science and Engineering Seoul National University Seoul 08826 South Korea

6. Department of Materials Science and Engineering University of Central Florida Orlando FL 32826 USA

7. Department of Physics University of Central Florida Orlando FL 32826 USA

Funder

Division of Civil, Mechanical and Manufacturing Innovation

National Research Foundation of Korea

Ministry of Science ICT and Future Planning

National Science Foundation

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.201800382

Reference64 articles.

1. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

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3. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

4. Electrochemistry of Nanostructured Layered Transition-Metal Dichalcogenides

5. Electronics based on two-dimensional materials

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