Ambipolar and Robust WSe 2 Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

Author:

Xu Hao1,Han Xiaoyu2,Liu Wei13,Liu Ping4,Fang Hehai56,Li Xiao1,Li Zhuangnan2,Guo Jian2,Xiang Bin4,Hu Weida5,Parkin Ivan P.2,Wu Jiang17ORCID,Guo Zhengxiao289,Liu Huiyun1

Affiliation:

1. Department of Electronic and Electrical EngineeringUniversity College London Torrington Place London WC1E 7JE UK

2. Department of ChemistryUniversity College London 20 Gordon St London WC1H 0AJ UK

3. London Centre for NanotechnologyUniversity College London London WC1H 0AH UK

4. Division of Nanomaterials & ChemistryHefei National Research Centre for Physical Sciences at the MicroscaleCAS Key Lab of Materials for Energy ConversionUniversity of Science and Technology of China Hefei Anhui 230026 China

5. State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences 500 Yu Tian Road Shanghai 200083 China

6. University of Chinese Academy of Sciences 19 Yuquan Road Beijing 100049 China

7. Institute of Fundamental and Frontier SciencesUniversity of Electronic Science and Technology of China Chengdu 610054 P. R. China

8. Department of ChemistryThe University of Hong Kong Hong Kong China

9. Zhejiang Institute of Research and InnovationThe University of Hong Kong Qingshan Lake SciTech City Hangzhou 311305 China

Funder

Engineering and Physical Sciences Research Council

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

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