High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity-Reference-Cited by-同舟云学术

High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity

Published:2016-05-27 Issue:16 Volume:3 Page:1600086
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv. Mater. Interfaces

Author:

Shen Xiao¹²,Pennycook Timothy J.³⁴,Hernandez-Martin David⁵,Pérez Ana⁵,Puzyrev Yevgeniy S.¹,Liu Yaohua⁶⁷,te Velthuis Suzanne G. E.⁷,Freeland John W.⁸,Shafer Padraic⁹,Zhu Chenhui⁹,Varela Maria⁵¹⁰,Leon Carlos⁵,Sefrioui Zouhair⁵,Santamaria Jacobo⁵¹¹,Pantelides Sokrates T.¹¹⁰¹²

Affiliation:

1. Department of Physics and Astronomy; Vanderbilt University; Nashville TN 37235 USA

2. Department of Physics and Materials Science; University of Memphis; Memphis TN 38152 USA

3. SuperSTEM Laboratory; Daresbury WA4 4AD UK

4. Department of Materials; Oxford University; Parks Road Oxford OX1 3PH UK

5. Grupo de Fisica de Materiales Complejos; Universidad Complutense; 28040 Madrid Spain

6. Quantum Condensed Matter Division; Oak Ridge National Laboratory; Oak Ridge TN 37831 USA

7. Materials Science Division; Argonne National Laboratory; Argonne IL 60439 USA

8. Advanced Photon Source; Argonne National Laboratory; Argonne IL 60439 USA

9. Advanced Light Source; Lawrence Berkeley National Laboratory; Berkeley CA 94720 USA

10. Materials Science and Technology Division; Oak Ridge National Laboratory; Oak Ridge TN 37831 USA

11. Instituto de Magnetismo Aplicado; Universidad Complutense; 28040 Madrid Spain

12. Department of Electrical Engineering and Computer Science; Vanderbilt University; Nashville TN 37235 USA

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Reference47 articles.

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