Evaluation of structural, electronic, thermoelectric, and optical results of C‐doped HfO 2 by first‐principle's investigation

Author:

Cao Zhenheng12,Fan Ting3,Hou Xueyuan12,Niu Jiajia4,Sharma Ramesh5,Dar Sajad Ahmad6ORCID

Affiliation:

1. School of Chemistry and Chemical EngineeringYan'an University Yan'an 716000 PR China

2. Shaanxi Key Laboratory of Chemical Reaction Engineering Yan'an City 716000 PR China

3. School of New Energy and Environmental EngineeringJiangxi University of Engineering Xinyu City 330046 PR China

4. School of Chemistry and Chemical EngineeringYan'an University Yan'an City 716000 PR China

5. Department of Applied ScienceFeroze Gandhi Institute of Engineering and Technology Raebareli 229001 (U.P.) India

6. Department of PhysicsGovt. Motilal Vigyan Mahavidyalya College Bhopal 462008 Madhya Pradesh State India

Publisher

Wiley

Subject

Energy Engineering and Power Technology,Fuel Technology,Nuclear Energy and Engineering,Renewable Energy, Sustainability and the Environment

Reference56 articles.

1. MooreGE. “Progress in digital integrated electronics” in International Electron Device Meeting 1975.

2. High-<tex>$kappa$</tex>/Metal–Gate Stack and Its MOSFET Characteristics

3. High dielectric constant oxides, The European;Robertson J;Phys J,2004

4. MauryaS SinghBR RadhakrishnaM.AIP Conf. Proc.1536 1159‐1160(2013).

5. KarS. “High Permittivity Gate Dielectric Materials” SpringerVerlag Berlin Heidelberg 2013. 10‐ K. Takahashi M. Nakayama S. Yokoyama T. Kimura E. Tokumitsu and H. Funakubo Applied Surface Science 216 296 (2003).

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