Thermodynamic analysis of transport of impurities via halides by the close-spaced epitaxial growth of InP-Reference-Cited by-同舟云学术

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Thermodynamic analysis of transport of impurities via halides by the close-spaced epitaxial growth of InP

Published:1974-07 Issue:1 Volume:407 Page:83-97
ISSN:0044-2313
Container-title:Zeitschrift f�r anorganische und allgemeine Chemie
language:de
Short-container-title:Z. Anorg. Allg. Chem.

Author:

Nicolau I. F.

Publisher

Wiley

Subject

Inorganic Chemistry

Reference26 articles.

1. The Transport of Gallium Arsenide in the Vapor Phase by Chemical Reaction

2. Phase equilibria in the GaAs and the GaP systems

3. and Crystal Growth, Suppl. J. Physics Chem. Solids, (Proc. ICCGl, Boston, 1966), 241, Pergamon Press, Oxford, 1967.

4. Thermodynamic Study of the Transport and Epitaxial Growth of GaAs in an Open Tube

5. Thermodynamic and Experimental Aspects of Gallium Arsenide Vapor Growth

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical Vapor Transport Reactions - Arguments for Choosing a Suitable Transport Agent;Zeitschrift für anorganische und allgemeine Chemie;2017-05-02

2. Kinetic aspects in the vapour phase epitaxy of III–V compounds;Journal of Crystal Growth;1975-12

3. KINETIC ASPECTS IN THE VAPOUR PHASE EPITAXY OF III–V COMPOUNDS;Vapour Growth and Epitaxy;1975

4. ChemInform Abstract: THERMODYNAMISCHE ANALYSE DES TRANSPORTS IN VERUNREINIGUNGEN UEBER DIE HALOGENIDE BEIM EPITAKTISCHEN WACHSTUM VON INP;Chemischer Informationsdienst;1974-08-13

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