Characterizing BJTs using the Early voltage in the forward active mode-Reference-Cited by-同舟云学术

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Characterizing BJTs using the Early voltage in the forward active mode

Published:2018-04 Issue:4 Volume:46 Page:978-986
ISSN:0098-9886
Container-title:International Journal of Circuit Theory and Applications
language:en
Short-container-title:Int J Circ Theor Appl

Author:

Costa Luciano da F.¹,Silva Filipi Nascimento¹,Comin Cesar H.²^ORCID

Affiliation:

1. São Carlos Institute of Physics; University of São Paulo; São Carlos SP Brazil

2. Department of Computer Science; Federal University of São Carlos; São Carlos SP Brazil

Funder

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Fundação de Amparo à Pesquisa do Estado de São Paulo

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Introductory Semiconductor Device Physics

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1. Innovative Design of Bismuth-Telluride-Based Thermoelectric Transistors;Materials;2023-08-09

2. Innovative design and optimized performance of thermoelectric transistor driven by the Seebeck effect;Energy Conversion and Management;2023-05

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