Origin of the low carrier lifetime edge zone in multicrystalline PV silicon-Reference-Cited by-同舟云学术

Origin of the low carrier lifetime edge zone in multicrystalline PV silicon

Published:2008-12-24 Issue:5 Volume:17 Page:289-296
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Naerland Tine Uberg,Arnberg Lars,Holt Arve

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pip.876/fullpdf

Reference18 articles.

1. Transition-metal profiles in a multicrystalline silicon ingot;Macdonald;Journal of Applied Physics,2005

2. Investigation of defects in the edge regions of multicrystalline solar silicon ingots;Rossberg;Solid State Phenomena,2005

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