Magnetoelectric and magnetoresistive properties of the СexMn1-xS semiconductors-Reference-Cited by-同舟云学术

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Magnetoelectric and magnetoresistive properties of the СexMn1-xS semiconductors

Published:2016-05-06 Issue:9 Volume:253 Page:1771-1781
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Aplesnin S. S.¹²,Sitnikov M. N.²,Romanova O. B.¹,Pichugin A. Yu.³

Affiliation:

1. Kirensky Institute of Physics SB RAS; Akademgorodok 50 660036 Krasnoyarsk Russia

2. Siberian State Aerospace University M F Reshetnev; Krasnoyarsky Rabochy Av. 31 660014 Krasnoyarsk Russia

3. Nikolaev Institute of Inorganic Chemistry SB RAS; Acad. Lavrenntiev Ave. 3 630090 Novosibirsk Russia

Funder

RFFI

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Nobel Lecture: Origin, development, and future of spintronics

2. Spin Electronics

3. Orbital order, metal-insulator transition, and magnetoresistance effect in the two-orbital Hubbard model

4. Spin Freezing Transition and Non-Fermi-Liquid Self-Energy in a Three-Orbital Model

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x} S Compound;physica status solidi (b);2022-02-13

4. Magnetoresistance and magnetoimpedance in holmium manganese sulfides;Applied Physics A;2022-01-15

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