Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping-Reference-Cited by-同舟云学术

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Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping

Published:2017-02-06 Issue:8 Volume:254 Page:1600713
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Slomski Michael¹,Paskov Plamen P.¹²,Leach Jacob H.³,Muth John F.¹,Paskova Tania¹

Affiliation:

1. Department of Electrical and Computer EngineeringNorth Carolina State UniversityBox 7911RaleighNC 27695‐7911USA

2. Department of Physics, Chemistry, and BiologyLinkoping UniversityLinkoping S‐58183Sweden

3. Kyma Technologies Inc.8829 Midway West RdRaleighNC 27617USA

Funder

National Science Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201600713

Reference16 articles.

1. Thermal conductivity of lateral epitaxial overgrown GaN films

2. High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence

3. Thermal conductivity of GaN films: Effects of impurities and dislocations

4. Accurate dependence of gallium nitride thermal conductivity on dislocation density

5. High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process

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1. Matryoshka phonon twinning in α-GaN;Communications Physics;2021-10-12

2. Anisotropic thermal conductivity of AlGaN/GaN superlattices;Nanotechnology;2020-11-26

3. High Thermal Conductivity of Bulk GaN Single Crystal: An Accurate Experimental Determination;JETP Letters;2020-07

4. Thermal conductivity of thin films of gallium nitride, doped with aluminium, measured with 3ω method;Solid State Sciences;2020-03

5. Reactor materials for high purity HVPE GaN growth: a thermodynamic analysis;Journal of Physics: Conference Series;2019-12-01

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