Thermoelectric Properties and Carrier Localization in Ultrathin Layer of Nb-Doped MoS2-Reference-Cited by-同舟云学术

Thermoelectric Properties and Carrier Localization in Ultrathin Layer of Nb-Doped MoS2

Published:2018-08-02 Issue:9 Volume:255 Page:1800125
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Thi Pham Xuan¹^ORCID,Miyata Masanobu¹,Van Ngoc Huynh¹,Lam Pham Tien²,Tung Nguyen Thanh¹,Muruganathan Manoharan¹,Tue Phan Trong¹,Akabori Masashi¹,Chi Dam Hieu²,Mizuta Hiroshi¹,Takamura Yuzuru¹,Koyano Mikio¹

Affiliation:

1. School of Materials Science, Japan Advanced Institute of Science and Technology; 1-1 Asahidai, Nomi Ishikawa 923-1292 Japan

2. School of Knowledge Science, Japan Advanced Institute of Science and Technology; 1-1 Asahidai, Nomi Ishikawa 923-1292 Japan

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201800125/fullpdf

Reference55 articles.

1. CRC Handbook of Thermoelectrics

2. Thermoelectric Cooling and Power Generation

3. Thermoelectrics: a review of present and potential applications

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