Ab initio density functional theory calculation of stacking fault energy and stress in 3C-SiC
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Reducing Planar Defects in 3C–SiC
2. Fabrication of high performance 3C-SiC vertical MOSFETs by reducing planar defects
3. Saddle-shape warpage of thick 3C-SiC wafer: Effect of nonuniform intrinsic stress and stacking faults
4. Scattering mechanisms and anomalous conductivity of heavily N-doped 3C-SiC in ultraviolet region
5. Influence of atomic relaxations on the structural properties of SiC polytypes fromab initiocalculations
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