Infrared defect dynamics: He irradiation induced complexes in high-quality silicon crystal-Reference-Cited by-同舟云学术

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Infrared defect dynamics: He irradiation induced complexes in high-quality silicon crystal

Published:2014-10-09 Issue:11 Volume:251 Page:2205-2210
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Inoue Naohisa¹²,Goto Yasunori³,Sugiyama Takahide⁴,Watanabe Kaori⁵,Seki Hirofumi⁶,Kawamura Yuichi²

Affiliation:

1. Tokyo University of Agriculture and Technology; 2-24-16, Naka-cho Koganei Tokyo 184-8588 Japan

2. Osaka Prefecture University; 1-2 Gakuen-cho, Naka-ku Sakai Osaka 599-8570 Japan

3. Toyota Motor Corporation; 543, Kirigahora, Nishihirose Toyota Aichi 470-0309 Japan

4. Toyota Central R&D Labs. Inc.; Nagakute Aichi 480-1192 Japan

5. Systems Engineering Inc.; 2-29-24, Honkomagome Bunkyo-ku Tokyo 113-0021 Japan

6. Toray Research Center Inc.; 3-3-7, Sonoyama Otsu Shiga 520-8567 Japan

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. T. Sugiyama S. Yamazaki S. Nakagaki M. Ishiko Proceedings of the 17th International Symposium on Power Semiconductor Devices & ICs 2004 243

2. Infrared measurement and irradiation of ultra low carbon concentration silicon crystal

3. Behavior of nitrogen in Si crystal during irradiation and post-annealing

4. Infrared Defect Dynamics of Irradiation Induced Complexes in CZ Silicon - C-Rich Case

5. Interaction between self-interstitials and the oxygen dimer in silicon

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Infrared defect dynamics—Nitrogen-vacancy complexes in float zone grown silicon introduced by electron irradiation;Journal of Applied Physics;2018-05-14

2. Infrared defect dynamics - radiation induced complexes in silicon crystals grown by various techniques;physica status solidi (c);2016-11-14

3. Carbon concentration measurement in silicon down to 1014 cm-3 : second generation IR, SIMS, CPAA and standardization;physica status solidi (c);2016-08-09

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