Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing-Reference-Cited by-同舟云学术

Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing

Author:

Akazawa Masamichi¹^ORCID,Kamoshida Ryo¹,Murai Shunta¹,Narita Tetsuo²,Omori Masato³,Suda Jun³⁴,Kachi Tetsu³

Affiliation:

1. Research Center for Integrated Quantum ElectronicsHokkaido University Sapporo 060-0813 Japan

2. Power Device Lab.Toyota Central R&D Labs., Inc. 41‐1, Yokomichi Nagakute, Aichi 480-1192 Japan

3. Institute of Materials and Systems for SustainabilityNagoya University Nagoya 464-8601 Japan

4. Department of ElectronicsNagoya University Nagoya 464-8603 Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

Reference42 articles.

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