Structures and Polarity of III‐Nitrides: Phase Diagram Calculations Using Absolute Surface and Interface Energies-Reference-Cited by-同舟云学术

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Structures and Polarity of III‐Nitrides: Phase Diagram Calculations Using Absolute Surface and Interface Energies

Published:2017-11-13 Issue:5 Volume:255 Page:1700329
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Akiyama Toru¹^ORCID,Nakane Harunobu¹,Uchino Motoshi¹,Nakamura Kohji¹,Ito Tomonori¹

Affiliation:

1. Department of Physics Engineering Mie University1577 Kurima‐MachiyaTsu 514‐8507Japan

Funder

Core Research for Evolutional Science and Technology

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201700329

Reference32 articles.

1. GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers

2. Microstructure of GaN epitaxy on SiC using AlN buffer layers

3. The Polarity of GaN: a Critical Review

4. Atomic arrangement at the AlN/SiC interface

5. Polarity of epitaxial layers and (1210)prismatic defects in GaN and AIN grown on the (0001)Sisurface of 6H-SiC

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1. Growth of N-Polar (0001) GaN in Metal–Organic Vapour Phase Epitaxy on Sapphire;Crystals;2023-07-07

2. A New Method for Relaxation of Elastic Stresses During the Growth of Heteroepitaxial Films;Mechanics of Solids;2023-05-11

3. A New Method for Relaxation of Elastic Stresses During the Growth of Heteroepitaxial Films;Известия Российской академии наук. Механика твердого тела;2023-05-01

4. Epitaxial Junction of Inversion Symmetry Breaking AlN and Centrosymmetric NbN: A Polarity Control of Wide-Bandgap AlN;ACS Applied Electronic Materials;2023-01-09

5. First-principles study for self-limiting growth of GaN layers on AlN(0001) surface;Japanese Journal of Applied Physics;2023-01-09

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