Optimizing GaN () hetero‐epitaxial templates grown on () sapphire
Author:
Affiliation:
1. Department of Materials Science and MetallurgyUniversity of Cambridge27 Charles Babbage Road, Cambridge, CB3 0FSUK
Funder
EU-FP7 ALIGHT
UK Engineering and Physical Sciences Research Council
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201552263
Reference34 articles.
1. Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
2. Growth and characterisation of semi-polar InGaN/GaN MQW structures
3. Investigation of carrier transport properties in semipolar (112¯2) GaN films with low defect density
4. Orientation control of GaN and grown on sapphire by metal-organic vapor phase epitaxy
5. Single phase {112¯2} GaN on (101¯0) sapphire grown by metal-organic vapor phase epitaxy
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4. Influence of Nucleation Layers on MOVPE Growth of Semipolar ($$11{\bar{2}}2$$) GaN on m-Plane Sapphire;Journal of Electronic Materials;2021-05-21
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