Electronic Properties of Ag Reconstructions on Si(111): Coulomb Blockade Behavior at Room Temperature-Reference-Cited by-同舟云学术

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Electronic Properties of Ag Reconstructions on Si(111): Coulomb Blockade Behavior at Room Temperature

Published:2018-02-15 Issue:4 Volume:255 Page:1700494
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Chandola Sandhya¹,McGilp John²,Esser Norbert¹

Affiliation:

1. Leibniz-Institut für Analytische Wissenschaften − ISAS − e.V.; Schwarzschildstraße 8 12489 Berlin Germany

2. School of Physics, Trinity College Dublin; Dublin 2 Ireland

Funder

Deutsche Forschungsgemeinschaft

Ministerium für Innovation, Wissenschaft und Forschung des Landes Nordrhein-Westfalen

Senatsverwaltung für Wirtschaft, Technologie und Forschung des Landes Berlin

Bundesministerium für Bildung und Forschung

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. Surface states of ordered Au, Ag, and Cu overlayers on Si(111) studied by inverse photoemission

2. Comment on “Conduction-Valence Landau-Level Mixing Effect”

3. High-resolution photoelectron spectroscopy study of (√3 × √3)R30°-Ag on Si(111)

4. Surface electrical conduction due to carrier doping into a surface-state band on Si(111)-3×3-Ag

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum well states and sizable Rashba splitting on Pb induced α-phase Bi/Si(111) surface reconstruction;Nanoscale;2021

2. A quantitative analysis of AES and XPS specifically applied in adsorption systems at submonolayer regime;Surface and Interface Analysis;2020-10-12

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