A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures
Author:
Affiliation:
1. School of Physics and Astronomy; Photon Science Institute, University of Manchester; Manchester M13 9PL UK
2. Department of Materials Science and Metallurgy; University of Cambridge; 27 Charles Babbage Road Cambridge CB3 OFS UK
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference28 articles.
1. Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities
2. Efficiency droop behaviors of InGaN∕GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness
3. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
4. Accurate calculation of polarization-related quantities in semiconductors
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