First-principles study of electronic properties of GaN nanowires: Effect of surface orientation, passivation, and Mn doping-Reference-Cited by-同舟云学术

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First-principles study of electronic properties of GaN nanowires: Effect of surface orientation, passivation, and Mn doping

Published:2016-08-17 Issue:11 Volume:253 Page:2185-2196
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Srivastava Pankaj¹,Kumar Avaneesh¹,Jaiswal Neeraj K.²,Sharma Varun¹

Affiliation:

1. Nanomaterials Research Group; ABV-Indian Institute of Information Technology and Management (IIITM); Gwalior 474015 India

2. Discipline of Physics; PDPM-Indian Institute of Information Technology, Design, and Manufacturing (IIITDM); Jabalpur 482005 India

Funder

SERB-DST

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference56 articles.

1. Zinc sulfide nanowire arrays on silicon wafers for field emitters

2. High Performance Silicon Nanowire Field Effect Transistors

3. Nanowire nanosensors

4. InP Nanowire/Polymer Hybrid Photodiode

5. Electrical transport properties of individual gallium nitride nanowires synthesized by chemical-vapor-deposition

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1. Enhancing Electronic and Magnetic Properties in Eu‐Doped GaN Nanowires via p‐f Hybridization of Eu‐Defect Complexes;Advanced Theory and Simulations;2024-06-09

2. Electronic Structure Investigation of GaN Nanowire Doped with Transition Metals Particles via First Principle;Particle & Particle Systems Characterization;2022-02-06

3. Temperature effect on shallow impurity states in a wurtzite GaN/Al Ga1-N core-shell nanowire;Physica E: Low-dimensional Systems and Nanostructures;2020-08

4. Preparation, doping modulation and field emission properties of square-shaped GaN nanowires;Acta Physica Sinica;2020

5. Segregation tendencies of transition-metal dopants in wide band gap semiconductor nanowires;Physical Chemistry Chemical Physics;2020

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