Isomorphic substitution and intermediary energy levels: A new application of DFT modelling and semiconductor theory to describe p-n type junctions interface in heterostructures-Reference-Cited by-同舟云学术

Isomorphic substitution and intermediary energy levels: A new application of DFT modelling and semiconductor theory to describe p-n type junctions interface in heterostructures

Published:2017-07-19 Issue:10 Volume:254 Page:1700119
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Lacerda Luis Henrique da Silveira¹,de Lazaro Sergio Ricardo¹

Affiliation:

1. Department of Chemistry; State University of Ponta Grossa; Ponta Grossa 84030-900 Paraná Brazil

Funder

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. A discrete memristor made of ZnO nanowires synthesized on printed circuit board

2. Resistive switching effect for ZnO hybrid memory with metal-oxide nanocrystals

3. ZnO nanostructures: growth, properties and applications

4. A unique strategy for improving top contact in Si/ZnO hierarchical nanoheterostructure photodetectors

5. Synthesis of hierarchical hexagonal zinc oxide/zinc aluminium hydroxide heterostructures through epitaxial growth using microwave irradiation

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