Enhanced Crystallinity of h-BN Films Induced by Substrate Bias During Magnetron Sputtering
Author:
Affiliation:
1. Department of Physics & Astronomy, Laboratory for Surface Science & Technology, University of Maine; Orono ME 04469-57068 USA
Funder
National Science Foundation under the SusChEM program
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor;Science China Materials;2024-05-22
2. Developing a Synthesis Process for Large‐Scale h‐BN Nanosheets Using Magnetron Sputtering and Heat Annealing;Advanced Engineering Materials;2023-10-25
3. The adsorption and diffusion behaviors of nitrogen impurities in h-BN by first-principles study;Materials Science in Semiconductor Processing;2023-02
4. Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate;Materials Science and Engineering: B;2021-08
5. On the recovery of 2DEG properties in vertically ordered h-BN deposited AlGaN/GaN heterostructures on Si substrate;Applied Physics Express;2020-05-28
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