TiO thin films on GaN(0001)-Reference-Cited by-同舟云学术

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TiO thin films on GaN(0001)

Published:2015-02-17 Issue:5 Volume:252 Page:1001-1005
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Wasielewski Radosław¹,Mazur Piotr¹,Grodzicki Miłosz¹,Ciszewski Antoni¹

Affiliation:

1. Institute of Experimental Physics; University of Wroclaw; pl. Maxa Borna 9 Wroclaw 50-204 Poland

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Comparison of Ni/Au, Pd/Au, and Cr/Au Metallizations for Ohmic Contacts to p-GaN

2. Effects of surface treatments and metal work functions on electrical properties atp-GaN/metal interfaces

3. Trends of the surface relaxations, surface energies, and work functions of the 4dtransition metals

4. GaN: Processing, defects, and devices

5. Pd growth and subsequent Schottky barrier formation on chemical vapor cleanedp-type GaN surfaces

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1. Growth and Properties of Ultra-Thin PTCDI-C8 Films on GaN(0001);Crystals;2024-02-20

2. Electrical, Optical and Structural Analysis Depending on Concentration of TiO Thin Films Produced via Dip-Coating Method;Uluslararası Muhendislik Arastirma ve Gelistirme Dergisi;2022-07-31

3. Cobalt and titanium co-doped zinc ferrite film photoanode with boosted interfacial photoelectrocatalytic activity for efficient degradation of tetracycline via the covalency competition in the Zn-O-Fe backbone;Chemical Engineering Journal;2022-04

4. Interfacial Polarization of Thin Alq3, Gaq3, and Erq3 Films on GaN(0001);Materials;2022-02-23

5. High on–off current ratio titanium oxynitride write-once-read-many-times memory;Semiconductor Science and Technology;2021-04-26

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