Anomalous Behavior of the Elastic and Optical Properties in Bi1.5 Sb0.5 Te1.8 Se1.2 Topological Insulator Induced by Point Defects-Reference-Cited by-同舟云学术

Anomalous Behavior of the Elastic and Optical Properties in Bi1.5 Sb0.5 Te1.8 Se1.2 Topological Insulator Induced by Point Defects

Published:2018-09-05 Issue:10 Volume:255 Page:1800264
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Zhevstovskikh Irina V.¹²^ORCID,Ponosov Yuri. S.¹²,Titova Svetlana G.²³,Averkiev Nikita S.⁴,Gudkov Vladimir V.²,Sarychev Maksim N.²,Kuznetsova Tatyana V.¹²,Kokh Konstantin A.⁵,Tereshchenko Oleg E.⁶

Affiliation:

1. M.N. Miheev Institute of Metal Physics, UB RAS; Ekaterinburg 620137 Russia

2. Ural Federal University; Ekaterinburg 620002 Russia

3. Institute of Metallurgy, UB RAS; Ekaterinburg 620016 Russia

4. Ioffe Institute; St. Petersburg 194021 Russia

5. V.S. Sobolev Institute of Geology and Mineralogy, SB RAS; Novosibirsk 630090 Russia

6. A.V. Rzanov Institute of Semiconductor Physics, SB RAS; Novosibirsk 630090 Russia

Funder

Russian Science Foundation

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201800264/fullpdf

Reference47 articles.

1. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

2. Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States inBi2Te3andSb2Te3

3. Colloquium: Topological insulators

4. OptimizingBi2−xSbxTe3−ySeysolid solutions to approach the intrinsic topological insulator regime

5. Observation of Dirac Holes and Electrons in a Topological Insulator

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