Metal-organic vapor phase epitaxy of GaPN alloys via surface nitridation using ammonia-Reference-Cited by-同舟云学术

Metal-organic vapor phase epitaxy of GaPN alloys via surface nitridation using ammonia

Published:2016-10-04 Issue:2 Volume:254 Page:1600483
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Yamane Keisuke¹,Moriyama Masashi¹,Boualiong Kerlee¹,Sekiguchi Hiroto¹,Okada Hiroshi²,Wakahara Akihiro¹²

Affiliation:

1. Department of Electrical and Electronic Information Engineering; Toyohashi University of Technology; 441-580, 1-1 Hibarigaoka, Tempaku, Toyohashi Aichi Japan

2. Electronics-Inspired Interdisciplinary Research Institute; Toyohashi University of Technology; 441-8580, 1-1 Hibarigaoka, Tempaku, Toyohashi Aichi Japan

Funder

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201600483/fullpdf

Reference22 articles.

1. Electrically pumped continuous-wave III–V quantum dot lasers on silicon

2. Design of a lattice-matched III–V–N/Si photovoltaic tandem cell monolithically integrated on silicon substrate

3. Operation of Monolithically-Integrated Digital Circuits with Light Emitting Diodes Fabricated in Lattice-Matched Si/III–V–N/Si Heterostructure

4. Dislocation-free and lattice-matched Si/GaP1−xNx/Si structure for photo-electronic integrated systems

5. Band Anticrossing in III-N-V Alloys

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