Fast in situ X-ray analysis of Ni silicide formation-Reference-Cited by-同舟云学术

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Fast in situ X-ray analysis of Ni silicide formation

Published:2017-03-16 Issue:7 Volume:254 Page:1600859
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Zaumseil Peter¹,Wolansky Dirk¹

Affiliation:

1. IHP; Im Technologiepark 25 15236 Frankfurt (Oder) Germany

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Metal Silicides in CMOS Technology: Past, Present, and Future Trends

2. Towards implementation of a nickel silicide process for CMOS technologies

3. Optimizing the formation of nickel silicide

4. Progress in the understanding of Ni silicide formation for advanced MOS structures

5. Effect of Pd on the Ni2Si stress relaxation during the Ni-silicide formation at low temperature

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of nickel silicide on SiGe BiCMOS devices;Semiconductor Science and Technology;2018-10-24

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