Comparative Study of Al 2 O 3 and HfO 2 for Surface Passivation of Cu(In,Ga)Se 2 Thin Films: An Innovative Al 2 O 3 /HfO 2 Multistack Design

Author:

Scaffidi Romain123ORCID,Buldu Dilara G.234ORCID,Brammertz Guy234ORCID,de Wild Jessica234ORCID,Kohl Thierry234ORCID,Birant Gizem234ORCID,Meuris Marc234ORCID,Poortmans Jef3456ORCID,Flandre Denis1ORCID,Vermang Bart234ORCID

Affiliation:

1. ICTEAM UCLouvain Place du Levant 3/L5.03.02 Louvain-la-Neuve 1348 Belgium

2. IMEC Division IMOMEC (partner in Solliance) Wetenschapspark 1 Diepenbeek 3590 Belgium

3. Solar EnergyVille Thorpark, Poort Genk 8310 & 8320 Genk 3600 Belgium

4. Institute for Material Research (IMO) Hasselt University (partner in Solliance) Wetenschapspark 1 Diepenbeek 3590 Belgium

5. PV Department IMEC (partner in Solliance) Kapeldreef 75 Leuven 3001 Belgium

6. Department of Electrical Engineering KU Leuven Kasteelpark Arenberg 10 Heverlee 3001 Belgium

Funder

H2020 European Research Council

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. The 2020 photovoltaic technologies roadmap

2. Approach for Al2 O3 rear surface passivation of industrial p-type Si PERC above 19%

3. A.Morato B.Vermang H.Goverde E.Cornagliotti G.Meneghesso J.John J.Poortmans presented at 38th IEEE PVSC Austin TX June 2012.

4. Table of Contents

5. Passivation effects of atomic-layer-deposited aluminum oxide

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