Experimental and Theoretical Investigation of Zr‐Doped CuO/Si Solar Cell

Abstract

Copper oxide (CuO) is a nanostructured semiconductor material with the potential for solar energy conversion and can be suitable for solar cells when used as a thin film. Herein, nondoped and doped (doping ratios of 1%, 2%, and 3% zirconium [Zr]) CuO thin films on silicon (Si) with the spin‐coating technique are developed. Optical and topological characterizations of CuO thin films are examined by ultraviolet‐visible and X‐ray diffraction. The electrical properties of nondoped and Zr‐doped CuO/Si heterojunctions are investigated with experimental current–voltage measurements in the dark and under illuminated conditions. The electrical behavior of nondoped and Zr‐doped CuO/Si heterojunctions is obtained using the experimental J–V technique and computational Cheung–Cheung and Norde methods. A simulation based on nondoped and Zr‐doped CuO/n‐Si heterojunction solar cells using SCAPS‐1D is completed. Photovoltaic (PV) parameters of experimentally produced and theoretically calculated CuO and Zr‐doped CuO/Si heterojunction solar cells are compared. Accordingly, PV parameters of 1% Zr‐doped CuO/Si solar cells show the highest power conversion efficiency calculated as a function of interfacial defect density and hole carrier concentration.