Recent Progress in Anisotropic 2D Semiconductors: From Material Properties to Photoelectric Detection-Reference-Cited by-同舟云学术

Recent Progress in Anisotropic 2D Semiconductors: From Material Properties to Photoelectric Detection

Published:2021-07-17 Issue:16 Volume:218 Page:2100204
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Wei Liubo¹,Li Yanran¹,Tian Changfa¹,Jiang Jie¹^ORCID

Affiliation:

1. Hunan Key Laboratory of Super Microstructure and Ultrafast Process School of Physics and Electronics Central South University Changsha 410083 China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100204

Reference128 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Highly Sensitive Detection of Polarized Light Using Anisotropic 2D ReS2

3. An Artificial Somatic Reflex Arc

4. 2D electric-double-layer phototransistor for photoelectronic and spatiotemporal hybrid neuromorphic integration

5. Photodetectors Based on Two-Dimensional Layered Materials Beyond Graphene

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