Structure and Luminescence Properties of InGaN/AlGaN Multiquantum‐Well Microrod Array Structures-Reference-Cited by-同舟云学术

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Structure and Luminescence Properties of InGaN/AlGaN Multiquantum‐Well Microrod Array Structures

Published:2022-01-19 Issue:6 Volume:219 Page:2100530
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Du Jinjuan¹,Xu Shengrui¹^ORCID,Peng Ruoshi¹,Zhao Ying¹,Fan Xiaomeng¹,Tao Hongchang¹,Zhang Jincheng¹,Hao Yue¹

Affiliation:

1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics Xi'dian University Xi'an 710071 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100530

Reference22 articles.

1. Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle

2. Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core–Shell Nanowire Light-Emitting Diode Array

3. Group III nitride core-shell nano- and microrods for optoelectronic applications

4. Nanofocus x-ray diffraction and cathodoluminescence investigations into individual core–shell (In,Ga)N/GaN rod light-emitting diodes

5. Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates

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