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69-4: NBIS-Stable Oxide Thin-Film Transistors Using Ultra-Wide Bandgap Amorphous Oxide Semiconductors

  • Published:2016-05 Issue:1 Volume:47 Page:951-953
  • ISSN:0097-966X
  • Container-title:SID Symposium Digest of Technical Papers
  • language:en
  • Short-container-title:

Author:

Kim Junghwan12,Nakamura Nobuhiro13,Kamiya Toshio1,Hosono Hideo12

Affiliation:

1. Tokyo Institute of Technology; 226-8503 Yokohama Nagatsuta, Midori-ku Japan

2. ACEEL Program, Japan Science and Technology Agency; 332-0012 Kawaguchi Japan

3. New Product R&D Center, Asahi Glass Co. Ltd; 221-8755 Yokohama Hazawa, Kanagawa-ku Japan

Publisher

Wiley

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of IGZO thin films fabricated by Pulsed-DC and RF sputtering on TFT characteristics;Materials Science in Semiconductor Processing;2020-12

2. P‐13.1: Large‐Size Curvature Laminated Transparent Touch Display Vehicle Window in Rail Transit;SID Symposium Digest of Technical Papers;2019-09

3. Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors;APL Materials;2019-02

4. Sputtered boron indium oxide thin-film transistors;Solid-State Electronics;2017-11

5. Research Trend on Information Display Technology;The Journal of The Institute of Image Information and Television Engineers;2017
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