Loss Analysis of Fully‐Textured Perovskite Silicon Tandem Solar Cells: Characterization Methods and Simulation toward the Practical Efficiency Potential

Author:

Er-raji Oussama12ORCID,Messmer Christoph12ORCID,Bett Alexander J.1ORCID,Fischer Oliver12,Reichmuth Sebastian Kasimir12ORCID,Schindler Florian1,Bivour Martin1,Schultz-Wittmann Oliver1ORCID,Borchert Juliane12ORCID,Hermle Martin1ORCID,Schön Jonas12,Heinz Friedemann D.2ORCID,Schubert Martin C.1ORCID,Schulze Patricia S. C.1,Glunz Stefan W.12ORCID

Affiliation:

1. Division Photovoltaics (PV) Fraunhofer Institute for Solar Energy Systems ISE Heidenhofstr. 2 79110 Freiburg Germany

2. Chair of Photovoltaic Energy Conversion Department of Sustainable Systems Engineering (INATECH) University of Freiburg Emmy-Noether-Str. 2 79110 Freiburg Germany

Abstract

Optimally enhancing the performance of perovskite silicon tandem solar cells comes with accurate identification of loss origins in the device in combination with optoelectrical device simulations assessing the respective efficiency gains to prioritize optimization pathways. Herein, various characterization methods, namely, spectrally resolved photoluminescence (PL), transient‐PL, PL‐based implied open‐circuit voltage (iVOC) imaging, spectrometric characterization, and Suns‐VOC measurements are combined to quantify current density–voltage (jV) photovoltaic metric losses of a fully‐textured perovskite silicon tandem solar cell (26.7% efficiency). The extracted device characteristic parameters are then used as a reference for the comprehensive optoelectrical Sentaurus simulation model which precisely reproduces the experimentally obtained optical and electrical solar cell characteristics, considering mobile ion dynamics. Subsequently, starting from the current device design, the authors alleviate one step at a time the loss constraints and show the impact of each loss channel on the efficiency, identifying the three major ones to be at the: 1) perovskite/C60 interface (−4.6%abs) , 2) the series resistance (−2.9%abs), and 3) light management (−2.1%abs), which limit the VOC, fill factor, and jSC of the device, respectively. Furthermore, it is demonstrated that a practical efficiency potential of 39.5% can be regarded as a practical limit for the presented tandem device architecture.

Funder

Fraunhofer-Gesellschaft

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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