Over 10% Efficient Pure CZTSe Solar Cell Fabricated by Electrodeposition with Ge Doping-Reference-Cited by-同舟云学术

Over 10% Efficient Pure CZTSe Solar Cell Fabricated by Electrodeposition with Ge Doping

Published:2020-03-30 Issue:5 Volume:4 Page:2000059
ISSN:2367-198X
Container-title:Solar RRL
language:en
Short-container-title:Sol. RRL

Author:

Zhang Zhaojing¹,Gao Qing¹,Guo Jiajia¹,Zhang Yongheng¹,Han Yanchen¹,Ao Jianping¹,Jeng Ming-Jer²,Liu Fangfang¹,Liu Wei¹,Zhang Yi¹^ORCID

Affiliation:

1. Key Laboratory of Photoelectronic Thin Film Devices and Technology of TianjinEngineering Research Center of Thin Film Photoelectronic TechnologyInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University Tianjin 300350 P. R. China

2. Department of Electronic EngineeringChang Gung University Taoyuan 33302 Taiwan

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/solr.202000059

Reference40 articles.

1. Device Characteristics of an 11.4% CZTSe Solar Cell Fabricated from Sputtered Precursors

2. Back Contact Engineering for Increased Performance in Kesterite Solar Cells

3. Large Efficiency Improvement in Cu2ZnSnSe4Solar Cells by Introducing a Superficial Ge Nanolayer

4. Band Alignment of the CdS/Cu2Zn(Sn1–xGex)Se4 Heterointerface and Electronic Properties at the Cu2Zn(Sn1–xGex)Se4 Surface: x = 0, 0.2, and 0.4

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