The mechanisms of formation of ohmic contacts to AlGaAs: A microstructural, elemental diffusion and electrical investigation-Reference-Cited by-同舟云学术

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The mechanisms of formation of ohmic contacts to AlGaAs: A microstructural, elemental diffusion and electrical investigation

Published:1996-08 Issue:5 Volume:18 Page:379-384
ISSN:0161-0457
Container-title:Scanning
language:en
Short-container-title:Scanning

Author:

Cole M. W.,Han W. Y.,Casas L. M.,Eckart D. W.,Monahan T.,Jones K. A.

Funder

Foundation for Advances in Medicine and Science, Inc.

Publisher

Wiley

Subject

Instrumentation,Atomic and Molecular Physics, and Optics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sca.1996.4950180509/fullpdf

Reference10 articles.

1. Pt/Ti/Ge/Pd ohmic contacts to GaAs: A structural. chemical and electrical investigation;Cole;J Vac Sci TechnolA,1994

2. Sulfer passivation of AlxGa1-xAs for ohmic contact formation;Fischer;J Vac Sci Technol A,1994

3. Han WY Cole MW Casas LM Jones KA Wade M DeAnni A Lepore A Lu Y Yang LW PtGeTiPt ohmic contacts to p + -AlGaAs Appl Phys Lett 1995

4. Pt/Ti ohmic contacts to ultrahigh carbon-doped p-GaAs formed by rapid thermal processing;Katz;Appl Phys Lett,1990

5. Ohmic contacts to heavily carbon-doped p-AlxGa1-xAs;Katz;J Appl Phys,1991

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of TiO2/Ag/TiO2 as an Ohmic Contact to an AlGaAs Layer in a GaAs Solar Cell;Energies;2023-05-12

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