Bonding III–V/Textured‐Silicon Monolithic Flexible Tandem Devices

Author:

Li Xingliang12345,Wang He6,Zhang Wudi6,Li Renjie12345,Ren Ningyu12345,Wang Sanlong12345,Li Yuxiang12345,Zou Qiaojiao12345,Han Wei12345,Zhang Qixing12345,Hou Guofu12345,Huang Qian12345,Xu Shengzhi12345,Zhang Chaohua7,Sun Qiang6,Zhao Ying12345,Zhang Xiaodan12345ORCID

Affiliation:

1. Institute of Photoelectronic Thin Film Devices and Technology Renewable Energy Conversion and Storage Center Solar Energy Research Center Nankai University Tianjin 300350 P. R. China

2. Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin Tianjin 300350 P. R. China

3. Haihe Laboratory of Sustainable Chemical Transformations Tianjin 300192 P. R. China

4. Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education Tianjin 300350 P. R. China

5. Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) Tianjin 300072 China

6. Cell Research Laboratory Tianjin Institute of Power Sources Tianjin 300381 China

7. Gold Stone (Fujian) Energy Company Ltd. Quanzhou 362000 China

Abstract

AbstractIII–V/silicon tandem solar cells simultaneously have the potential advantages of high efficiency and low cost. Bonding is an effective way to realize tandem at both ends. However, it is difficult to realize vacuum bonding in industrialized micrometer‐sized pyramid silicon cells. Up to know, all bonding in III–V/silicon tandem solar cells is based on planar silicon cells. Here, a transparent conductive adhesive (TCA) based on micron particle size is designed and implemented, which realizes the bonding of III–V cell and textured silicon cell for the first time. The TCA consists of epoxy adhesive 301 (Epoxy‐301) as transparent adhesive and silver‐coated flexible polymethylmethacrylate microspheres as conductive particles. The average contact resistance of TCA is 0.17 Ω cm2, and the transmittance exceeds 91% in the range of 800—1200 nm. In addition, TCA shows good stability in the etching process of GaAs substrates. Monolithic III–V/silicon device exhibits 25.1% power conversion efficiency (PCE) on thin and textured silicon heterojunction solar cells, which enables flexible properties of tandem cells. Compared with silicon subcell and III–V subcell, the performance of tandem device is improved by 28.3% and 8.6%, respectively. This strategy provides a broad research window for improving the performance of tandem solar cells based on industrialized textured‐silicon bottom cells.

Funder

Natural Science Foundation of Tianjin City

China Postdoctoral Science Foundation

Fundamental Research Funds for the Central Universities

Nankai University

National Natural Science Foundation of China

Publisher

Wiley

Subject

Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science

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