Implementation of Highly Reliable and Energy Efficient in‐Memory Hamming Distance Computations in 1 Kb 1‐Transistor‐1‐Memristor Arrays-Reference-Cited by-同舟云学术

Implementation of Highly Reliable and Energy Efficient in‐Memory Hamming Distance Computations in 1 Kb 1‐Transistor‐1‐Memristor Arrays

Published:2021-08-26 Issue:12 Volume:6 Page:2100745
ISSN:2365-709X
Container-title:Advanced Materials Technologies
language:en
Short-container-title:Adv Materials Technologies

Author:

Lin Huai¹²,Wu Zuheng¹³,Liu Long¹²,Wang Di¹²,Zhao Xuefeng¹⁴,Cheng Lingli¹²,Lin Ya⁵,Wang Zhongqiang⁵,Xu Xiaoxin¹²,Xu Haiyang⁵,Liu Qi⁶,Xing Guozhong¹²^ORCID

Affiliation:

1. Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 P. R. China

2. University of Chinese Academy of Sciences Beijing 100049 P. R. China

3. School of Integrated Circuits Anhui University Hefei Anhui 230601 P. R. China

4. School of Microelectronics University of Science and Technology of China Hefei Anhui 230026 P. R. China

5. Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light‐Emitting Materials and Technology (Northeast Normal University) Ministry of Education Changchun 130024 P. R. China

6. Frontier Institute of Chip and System Fudan University Shanghai 200433 P. R. China

Funder

National Natural Science Foundation of China

National Outstanding Youth Science Fund Project of National Natural Science Foundation of China

Key Technologies Research and Development Program

Publisher

Wiley

Subject

Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admt.202100745

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5. A Habituation Sensory Nervous System with Memristors

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