Compensation of Oxygen Doping in p‐Type Organic Field‐Effect Transistors Utilizing Immobilized n‐Dopants-Reference-Cited by-同舟云学术

Compensation of Oxygen Doping in p‐Type Organic Field‐Effect Transistors Utilizing Immobilized n‐Dopants

Published:2020-11-16 Issue: Volume: Page:2000556
ISSN:2365-709X
Container-title:Advanced Materials Technologies
language:en
Short-container-title:Adv. Mater. Technol.

Author:

Barf Marc‐Michael¹²,Benneckendorf Frank S.²³,Reiser Patrick²⁴,Bäuerle Rainer²⁵,Köntges Wolfgang⁶,Müller Lars¹²⁵,Pfannmöller Martin⁶,Beck Sebastian²⁵,Mankel Eric²⁴,Freudenberg Jan²³,Jänsch Daniel²³,Tisserant Jean‐Nicolas¹²,Lovrincic Robert¹²,Schröder Rasmus R.⁷,Bunz Uwe H. F.²³,Pucci Annemarie²⁵⁶,Jaegermann Wolfram²⁴,Kowalsky Wolfgang¹²⁵^ORCID,Müllen Klaus²⁸

Affiliation:

1. Institute for High Frequency Technology Technical University of Braunschweig Schleinitzstraße 22 Braunschweig 38106 Germany

2. InnovationLab Speyerer Straße 4 Heidelberg 69115 Germany

3. Institute of Organic Chemistry Heidelberg University Im Neuenheimer Feld 270 Heidelberg 69120 Germany

4. Materials Science Department Surface Science Division Technical University of Darmstadt Otto‐Berndt‐Straße 3 Darmstadt 64287 Germany

5. Kirchhoff Institute for Physics Heidelberg University Im Neuenheimer Feld 227 Heidelberg 69120 Germany

6. Centre for Advanced Materials Heidelberg University Im Neuenheimer Feld 225 Heidelberg 69120 Germany

7. 3DMM2O Cluster of Excellence (EXC‐2082/1 ‐ 390761711) and CAM ‐ Centre for Advanced Materials Heidelberg University Heidelberg 69120 Germany

8. Max Planck Institute for Polymer Research Ackermannweg 10 Mainz 55128 Germany

Funder

Bundesministerium für Bildung und Forschung

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admt.202000556

Reference51 articles.

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