Tuning Electrical and Optical Properties of MoSe 2 Transistors via Elemental Doping-Reference-Cited by-同舟云学术

Tuning Electrical and Optical Properties of MoSe 2 Transistors via Elemental Doping

Published:2020-06-08 Issue:7 Volume:5 Page:2000307
ISSN:2365-709X
Container-title:Advanced Materials Technologies
language:en
Short-container-title:Adv. Mater. Technol.

Author:

Xia Yin¹,Wei Lujun²,Deng Jie³,Zong Lingyi⁴,Wang Chaolun¹,Chen Xinyu⁴,Liang Fang¹,Luo Chen¹,Bao Wenzhong⁴,Xu Zihan⁵,Zhou Jing³,Pu Yong²,Wu Xing¹^ORCID

Affiliation:

1. Shanghai Key Laboratory of Multidimensional Information ProcessingSchool of Communication and Electronic EngineeringEast China Normal University 500 Dongchuan Road Shanghai 200241 China

2. New Energy Technology Engineering Laboratory of Jiangsu Provence & School of ScienceNanjing University of Posts and Telecommunications 9 Wenyuan Road Nanjing 210023 China

3. Shanghai Institute of Technical PhysicsChinese Academy of Sciences 500 Yutian Road Shanghai 200083 China

4. State Key Laboratory of ASIC and System & School of MicroelectronicsFudan University 826 Zhangheng Road Shanghai 200433 China

5. Shenzhen Sixcarbon Technology 188 Jiangshi Road Shenzhen 518106 China

Funder

Science and Technology Commission of Shanghai Municipality

National Basic Research Program of China

Shanghai Rising-Star Program

Fundamental Research Funds for the Central Universities

East China Normal University

Publisher

Wiley

Subject